Graphene on Silicon Nitride TEM Grids

Graphene on Silicon Nitride TEM GridsProduct Name Name: ACS Material Graphene on Silicon Nitride TEM Grids Product Overview The process of preparing graphene by CVD mainly includes three important influencing factors: substrate, precursor, and growth conditions. Among them, the substrate is an important condition for the growth of graphene. Currently, 8 10 transition metals (such as Fe, RuCoRhIrNiPdPtCuAu And alloys (such as Co Ni, Au Ni, Ni Mo, stainless steel). The mechanism of

Product Name

Name:ACS Material Graphene on Silicon Nitride TEM Grids

Product Overview

The process of preparing graphene by CVD mainly includes three important influencing factors: substrate, precursor, and growth conditions. Among them, the substrate is an important condition for the growth of graphene. Currently, 8-10 transition metals (such as Fe, Ru，Co，Rh，Ir，Ni，Pd，Pt，Cu，Au）， And alloys (such as Co Ni, Au Ni, Ni Mo, stainless steel). The mechanism of preparing graphene by CVD varies among different substrate materials, mainly divided into two preparation mechanisms: carburization and carbon deposition mechanism, which involves the infiltration of cracked carbon into the substrate at high temperatures and the formation of graphene on the surface during rapid cooling; The surface catalytic mechanism refers to the formation of graphene on the surface of carbon after cracking at high temperatures when it comes into contact with a specific metal (such as copper), and protects the sample from further deposition of thin films. Therefore, this mechanism is more likely to form single-layer graphene.

In practical applications, the synthesis method of CVD graphene film may vary depending on specific experimental requirements and conditions. Researchers typically optimize and adjust the synthesis process based on target performance and application scenarios. Meanwhile, new synthesis methods and technologies are constantly developing and exploring to improve the quality and performance of graphene films.

Usually, graphene is first grown on a metal substrate, then spin coated with PMMA and transferred onto substrates such as silicon oxide, quartz, glass, PET, or copper mesh.

Technical Parameter

Specifications: Silicon Nitride base

Product Features

High quality: with high purity and crystallinity;

Good electrical performance: high carrier mobility and low resistivity;

High transparency: has good transparency for visible light;

High mechanical strength: has good flexibility and tolerance;

Good chemical stability: exhibits good stability at room temperature

Application Fields

Analysis and research: It can be directly applied to TEM observation and study the structure and characteristics of graphene.

Electronic devices: such as field-effect transistors, capacitors, etc;

Optical components: transparent conductive films, touch screens, etc;

Sensors: chemical sensors, biosensors, etc;

Energy sector: such as solar cells, supercapacitors, etc;

Composite materials: Composite with other materials to enhance performance.

Related Information

Please e-mail for the detailed characterization data.

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